(Hong Kong)
Product Summary
The BLC6G27-100 is a 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. It is suitable for RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range.
Parametrics
BLC6G27-100 absolute maximum ratings: (1)VDS, drain-source voltage: 65 V max; (2)VGS, gate-source voltage: -0.5 to +13 V; (3)Tstg, storage temperature: -65 to +150℃; (4)Tj, junction temperature: -200℃.
Features
BLC6G27-100 features: (1)Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA: Average output power = 32 W; Power gain = 23 dB; Efficiency = 28 %; ACPR = -40 dBc; (2)Easy power control; (3)Integrated ESD protection; (4)Excellent ruggedness; (5)High efficiency; (6)Excellent thermal stability; (7)Designed for broadband operation (800 MHz to 1000 MHz); (8)Internally matched for ease of use.
Diagrams
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 BLC6G27-100,112 |
NXP Semiconductors |
Transistors RF MOSFET Power 28V |
Data Sheet |
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BLC6G27-100,118 |
NXP Semiconductors |
Transistors RF MOSFET Power 28V |
Data Sheet |
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