Product Summary

The MRF20060R is an N-Channel Enhancement-Mode Lateral MOSFET designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

Parametrics

MRF20060R absolute maximum ratings: (1)Drain-Source Voltage VDSS: 65 Vdc; (2)Gate-Source Voltage VGS: -0.5, +15 Vdc; (3)Total Device Dissipation @ TC = 25°C, PD: 43.75W; 0.25W/°C Derate above 25°C; (4)Storage Temperature Range Tstg: -65 to +150 °C; (5)Operating Junction Temperature TJ: 200 °C.

Features

MRF20060R features: (1)High Gain, High Efficiency and High Linearity; (2)Integrated ESD Protection; (3)Designed for Maximum Gain and Insertion Phase Flatness; (4)Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz, 10 Watts CW Output Power; (5)Excellent Thermal Stability; (6)Characterized with Series Equivalent Large-Signal Impedance Parameters; (7)In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel; (8)Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.

Diagrams

MRF20060R block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF20060R
MRF20060R
Other

Data Sheet
Negotiable 
MRF20060RS
MRF20060RS
Other

Data Sheet
Negotiable