(Hong Kong)
Product Summary
The MRF9120 is a RF Power Field Effect Transistor. It is designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 26 volt base station equipment.
Parametrics
MRF9120 absolute maximum ratings: (1)Drain-Source Voltage VDSS: －0.5, +65 Vdc; (2)Gate-Source Voltage VGS: －0.5, +15 Vdc; (3)Storage Temperature Range Tstg: －65 to +150 ℃; (4)Case Operating Temperature TC: 150 ℃; (5)Operating Junction Temperature TJ: 200 ℃.
Features
MRF9120 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Integrated ESD Protection; (3)Designed for Maximum Gain and Insertion Phase Flatness; (4)Excellent Thermal Stability; (5)Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40u Nominal.; (6)RoHS Compliant; (7)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF9120LR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power 120W 880MHZ NI860L FET |
Data Sheet |
Negotiable |
|
||||
|
MRF9120LR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power 120W 880MHZ NI860L FET |
Data Sheet |
Negotiable |
|
||||
 |
MRF9120R3 |
Other |
|
Data Sheet |
Negotiable |
|
||||
