(Hong Kong)
Product Summary
The MW4IC2020GNB wideband integrated power amplifier is designed with on-chip matching that makes it usable from 1600 to 2400 MHz. This multi stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats.
Parametrics
MW4IC2020GNB absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5 to +65 Vdc; (2)Gate-Source Voltage VGS: -0.5 to +15 Vdc; (3)Storage Temperature Range Tstg: -65 to +175 ℃; (4)Operating Junction Temperature TJ: 200 ℃; (5)Input Power Pin: 20 dBm.
Features
MW4IC2020GNB features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output); (3)Integrated Temperature Compensation with Enable/Disable Function; (4)On-Chip Current Mirror gm Reference FET for Self Biasing Application; (5)Integrated ESD Protection; (6)200℃ Capable Plastic Package; (7)N Suffix Indicates Lead-Free Terminations. RoHS Compliant; (8)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MW4IC2020GNBR1 |
Freescale Semiconductor |
RF Amplifier 20W 26V EDGE |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
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MW4IC001MR4 |
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IC RF PWR AMP 26V 900MW 1.5-PLD |
Data Sheet |
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MW4IC001NR4 |
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IC RF PWR AMP 26V 900MW 1.5-PLD |
Data Sheet |
Negotiable |
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MW4IC2020GMBR1 |
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IC PWR AMP RF 26V 20W TO272-16GW |
Data Sheet |
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MW4IC2020GMBR5 |
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IC PWR AMP RF 26V 20W TO272-16GW |
Data Sheet |
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MW4IC2020GNBR1 |
Freescale Semiconductor |
RF Amplifier 20W 26V EDGE |
Data Sheet |
Negotiable |
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MW4IC2020MBR1 |
|
IC PWR AMP RF 26V 20W TO-272-16 |
Data Sheet |
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