Product Summary

The PTF10045 is a common source N-channel enhancement-modelateral MOSFET intended for large signal amplifier applications to 1.65GHz. It is rated at 30 watts power output. Nitride surface passivationand gold metallization ensure excellent device lifetime and reliability.

Parametrics

PTF10045 absolute maximum rarings: (1)Drain-Source Voltage VDSS: 65 Vdc; (2)Gate-Source Voltage VGS ±20 Vdc; (3)Operating Junction Temperature TJ 200°C; (4)Total Device Dissipation at Tflange = 25°C PD 120Watts derate by0.7W/°C; (5)Storage Temperature TSTG 150°C; (6)Thermal Resistance (Tflange = 70°C)RqJC1.4°C/W

Features

PTF10045 features: (1)Performance at 1650 MHz, 28 Volts - Output Power = 30 Watts - Power Gain = 11.5 dB Typ; (2)Full Gold Metallization; (3)Silicon Nitride Passivated; (4)Excellent Thermal Stability; (5)Back Side Common Source; (6)100% Lot Traceability

Diagrams

PTF10045 block diagram