Product Summary

The 2sk3569 is a Toshiba field effect transistor. Application of the 2sk3569 includes Switching Regulator.

Parametrics

2sk3569 absolute maximum ratings: (1) Drain-source voltage VDSS: 600V; (2) Drain-gate voltage (RGS=20kΩ) VDGR: 600V; (3) Gate-source voltage VGSS: ±30V; (4) Drain current DC: 10A, IDP: 40A (Pulse (t=1ms) ) ; (5) Drain power dissipation (Tc = 25°C) , PD: 45W; (6) Single pulse avalanche energy EAS: 363mJ; (7) Avalanche current IAR: 10A; (8) Repetitive avalanche energy EAR: 4.5mJ; (9) Channel temperature Tch: 150°C; (10) Storage temperature range Tstg: -55 to 150°C.

Features

2sk3569 features: (1) Low drain-source ON resistance: RDS (ON) =0.54V; (2) High forward transfer admittance: |Yfs| = 8.5S (typ.) ; (3) Low leakage current: IDSS= 100 A (VDS= 600V) ; (4) Enhancement-mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA) .

Diagrams

2SK3569 Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SK3569
2SK3569


MOSFET N-CH 600V 10A TO-220SIS

Data Sheet

Negotiable 
2SK3569(Q)
2SK3569(Q)

Toshiba

MOSFET N-Ch 600V 10A Rdson 0.75 Ohm

Data Sheet

Negotiable 
2SK3569(Q,M)
2SK3569(Q,M)


MOSFET N-CH 600V 10A TO-220SIS

Data Sheet

0-500: $0.94