(Hong Kong)
Product Summary
The AM28F020A-90EC is a 2 Megabit Flash memory organized as 256 Kbytes of 8 bits each. AMDs Flash memories offer the most cost-effective and reliable read/ write non-volat ile random access memory. The AM28F020A-90EC is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The AM28F020A-90EC is erased when shipped from the factory. AMDs Flash technology combines years of EPROM and EEPROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The AM28F020A-90EC electrically erases all bits simultaneously using Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the EPROM programming mechanism of hot electron injection.
Parametrics
AM28F020A-90EC absolute maximum ratings: (1)Storage Temperature: -65°C to +125°C; (2)Ambient Temperature with Power Applied: -55°C to +125°C; (3)Voltage with Respect to Ground All pins except A9 and VPP: -2.0 V to +7.0 V; (4)VCC: -2.0 V to +7.0 V; (5)A9, VPP: -2.0 V to +14.0 V; (6)Output Short Circuit Current: 200 mA.
Features
AM28F020A-90EC features: (1)High performance: Access times as fast as 70 ns; (2)CMOS low power consumption; (3)Compatible with JEDEC-standard byte-wide; (4)100,000 write/erase cycles minimum; (5)Write and erase voltage 12.0 V ±5%; (6)Latch-up protected to 100 mA from –1 V to VCC +1 V; (7)Embedded Erase Electrical Bulk Chip Erase: Five seconds typical chip erase, including pre-programming; (8)Embedded Program; (9)Command register architecture for microprocessor/microcontroller compatible write interface On-chip address and data latches; (10)Advanced CMOS flash memory technology: Low cost single transistor memory cell; (11)Embedded algorithms for completely self-timed write/erase operations.
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