AM29F040B-120JC

AM29F040B-120JC, Flash memory, 12.5 V, 200 mA, 55 ns, TSOP

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Price:: US $3.19~3.52 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
100 ~ 500 :	3.52 / Piece
500 ~ 1000 :	3.34 / Piece
1000 ~ 1500 :	3.19 / Piece

PartNumber:: AM29F040B-120JC

Brand:: Advanced Micro Devices - AMD | Pack: PLCC | D/C: 00+

Availability:: Supply Ability: 10000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-09-24

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Part Number:AM29F040B-120JC
US $3.19 - 3.52
Quantity:

piece

Product Summary

The AM29F040B-120JC is a 4 Mbit, 5.0 volt-only Flash memory, which is organized as 524,288 Kbytes of 8 bits each. The 512 Kbytes of data are divided into eight sectors of 64 Kbytes each for flexible erase capability. The 8 bits of data appear on DQ0–DQ7. The AM29F040B-120JC is offered in 32-pin PLCC, TSOP, and PDIP packages. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for write or erases operations. The AM29F040B-120JC can also be programmed in standard EPROM programmers.

Parametrics

AM29F040B-120JC absolute maximum ratings: (1)Storage Temperature Plastic Packages: –65℃ to +125℃; (2)Ambient Temperature with Power Applied: –55℃ to +125℃; (3)Voltage with Respect to Ground: VCC: –2.0 V to 7.0 V, A9, OE#: –2.0 V to 12.5 V, All other pins: –2.0 V to 7.0 V; (4)Output Short Circuit Current: 200 mA.

Features

AM29F040B-120JC features: (1)5.0 V ± 10% for read and write operations: Minimizes system level power requirements; (2)Manufactured on 0.32 μm process technology: Compatible with 0.5 μm Am29F040 device; (3)High performance: Access times as fast as 55 ns; (4)Low power consumption: 20 mA typical active read current, 30 mA typical program/erase current, 1 μA typical standby current (standard access time to active mode); (5)Flexible sector architecture: 8 uniform sectors of 64 Kbytes each, Any combination of sectors can be erased.