(Hong Kong)
Product Summary
The AM29LV081B-120EI is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes. The AM29LV081B-120EI is offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7–DQ0. The AM29LV081B-120EI requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.The AM29LV081B-120EI is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.
Parametrics
AM29LV081B-120EI absolute maximum ratings: (1)Storage Temperature Plastic Packages: –65℃ to +150℃; (2)Ambient Temperature with Power Applied: –65℃ to +125℃; (3)Voltage with Respect to Ground VCC: –0.5 V to +4.0 V; A9, OE#, and RESET#:–0.5 V to +12.5 V; All other pins: –0.5 V to VCC+0.5 V; (4)Output Short Circuit Current: 200 mA.
Features
AM29LV081B-120EI features: (1)Single power supply operation; (2)Manufactured on 0.32 μm process technology; (3)High performance; (4)Ultra low power consumption (typical values at 5 MHz); (5)Flexible sector architecture; (6)Unlock Bypass Program Command; (7)Embedded Algorithms; (8)Minimum 1,000,000 write cycle guarantee per sector; (9)20-year data retention at 125℃; (10)Compatibility with JEDEC standards; (11)Data# Polling and toggle bits; (12)Ready/Busy# pin (RY/BY#); (13)Erase Suspend/Erase Resume; (14)Hardware reset pin (RESET#); (15)Command sequence optimized for mass storage.
Diagrams
