(Hong Kong)
Product Summary
The AS4C4M4F1-60JC is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM. It offers high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). Other features include CAS\-before-RAS\, RAS\-only refresh, and Hidden refresh capabilities. This 4M x 4 Fast Page Mode DRAM is fabricated using an advanced CMOS process to realize high bandwidth, low power consumption and high reliability. It may be used as main memory for high level computers, microcomputers and personal computers.
Parametrics
AS4C4M4F1-60JC absolute maximum ratings: (1)Voltage on any pin relative to Vss VIN, VOUT: -1.0V to 7.0V; (2)Voltage on VDD supply relative to Vss VDD, VDDQ: -1.0V to 7.0V; (3)Storage temperature TSTG: -55℃ to +150℃; (4)Power dissipation PD: 1W; (5)Short circuit current IOS: 50mA.
Features
AS4C4M4F1-60JC features: (1)Fast Page Mode Operation; (2)CAS\-before-RAS\ Refresh Capability; (3)RAS\-only and Hidden Refresh Capability; (4)Self-refresh Capability; (5)Fast Parallel Test Mode Capability; (6)TTL Compatible Inputs and Outputs; (7)Early Write or Output Enable Controlled Write; (8)JEDEC Standard Pinout; (9)Single +5V (±10%) Power Supply.
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