(Hong Kong)
Product Summary
The BTS949 is a N channel vertical power FET in Smart SIPMOS chip on chip technology. It is fully protected by embedded protected functions. The applications of BTS949 are: All kinds of resistive, inductive and capacitive loads in switching or linear applications; μC compatible power switch for 12 V and 24 V DC applications; Replaces electromechanical relays and discrete circuits.
Parametrics
BTS949 absolute maximum ratings: (1)Drain source voltage VDS: 60 V; (2)Drain source voltage for short circuit protection, RCC = 0 Ω : 15V; without RCC, VDS(SC): 50V; (3)Continuous input current: -0.2V ≤ VIN ≤ 10V: no limit ; VIN < -0.2V or VIN > 10V, IIN: | IIN | ≤ 2mA; (4)Operating temperature Tj: - 40 to +150 ℃; (5)Storage temperature Tstg: - 55 to +150 ℃; (6)Power dissipation, TC = 25 ℃, Ptot: 240 W; (7)Unclamped single pulse inductive energy, ID(ISO) = 19 A; (8)EAS: 6000 mJ; (9)Electrostatic discharge voltage (Human Body Model), VESD: 3000 V; (10)DIN humidity category, DIN 40 040 E; (11)IEC climatic category; DIN IEC 68-1: 40/150/56.
Features
BTS949 features: (1)Logic Level Input; (2)Input Protection (ESD); (3)Thermal shutdown with latch; (4)Overload protection; (5)Short circuit protection; (6)Overvoltage protection; (7)Current limitation; (8)Maximum current adjustable with external resistor; (9)Current sense; (10)Status feedback with external input resistor; (11)Analog driving possible.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BTS949 E3043 |
Infineon Technologies |
Power Switch ICs - POE / LAN HITFET Smart Lowside Pwr Switch |
Data Sheet |
Negotiable |
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BTS949 E3062A |
Infineon Technologies |
Power Switch ICs - POE / LAN HITFET Smart Lowside Pwr Switch |
Data Sheet |
Negotiable |
|
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 |
BTS949 |
Infineon Technologies |
Power Switch ICs - POE / LAN HITFET Smart Lowside Pwr Switch |
Data Sheet |
Negotiable |
|
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