Product Summary
The FDD6670A is a N-Channel Logic level MOSFET.The FDD6670A is produced using Fairchild Semiconductor advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications are (1)DC/DC converter; (2)Motor drives.
Parametrics
FDD6670A absolute maximum ratings: (1)Drain-Source Voltage: 30 V; (2)Gate-Source Voltage: ±20 V; (3)Maximum Drain Current -Continuous: 66 A; (4)Maximum Drain Current -Pulsed: 100 A; (5)Maximum Power Dissipation: 70 W; (6)Operating and Storage Junction Temperature Range: -55 to +150 °C.
Features
FDD6670A features: (1)Low gate charge (35nC typical).; (2)Fast switching speed.; (3)High performance trench technology for extremely low RDS(on).
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
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![]() FDD6670A |
![]() Fairchild Semiconductor |
![]() MOSFET 30V N-Ch PowerTrench Logic Level |
![]() Data Sheet |
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![]() FDD6670A_Q |
![]() Fairchild Semiconductor |
![]() MOSFET 30V N-Ch PowerTrench Logic Level |
![]() Data Sheet |
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![]() FDD6670AL |
![]() Fairchild Semiconductor |
![]() MOSFET 30V N-Ch PowerTrench |
![]() Data Sheet |
![]() Negotiable |
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![]() FDD6670AS |
![]() Fairchild Semiconductor |
![]() MOSFET 30V N-Channel PowerTrench SyncFET |
![]() Data Sheet |
![]() Negotiable |
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