Product Summary
The FDD6680A N-Channel Logic level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications are DC/DC converter, Motor drives.
Parametrics
FDD6680A absolute maximum ratings: (1)VDSS Drain-Source Voltage: 30 V; (2)VGSS Gate-Source Voltage: ±20 V; (3)ID Maximum Drain Current - Continuous: 56A; (4)Maximum Drain Current - Pulsed: 100 A; (5)Maximum Power Dissipation @ TC = 25°C: 60W; (6)TJ, Tstg Operating and Storage Junction Temperature Range: -55 to +150 °C.
Features
FDD6680A features: (1)Low dropout voltage; (2)Load regulation: 0.05% typical; (3)Trimmed current limit; (4)On-chip thermal limiting; (5)Standard SOT-223, TO-220, and TO-252 packages; (6)Three-terminal adjustable or fixed 1.8V, 2.5V, 2.85V, 3.3V, 5V.
Diagrams
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![]() FDD6680A |
![]() Fairchild Semiconductor |
![]() MOSFET 30V N-Ch PowerTrench |
![]() Data Sheet |
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![]() FDD6680A_Q |
![]() Fairchild Semiconductor |
![]() MOSFET 30V N-Ch PowerTrench |
![]() Data Sheet |
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![]() FDD6680AS |
![]() Fairchild Semiconductor |
![]() MOSFET 30V NCH DPAK POWR TRENCH |
![]() Data Sheet |
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