(Hong Kong)
Product Summary
The GE28F320W18BD60 is a wireless flash memory with flexible multi-partition dual operation, provides high-performance asynchronous and synchronous burst reads. The GE28F320W18BD60 is an ideal memory for low-voltage burst CPUs. The dual-operation architecture also allows two processors to interleave code operations while program and erase operations take place in the background. The designer can also choose the size of the code and data partitions via the flexible multi-partition architecture.
Parametrics
GE28F320W18BD60 absolute maximum ratings: (1)Temperature under Bias: –40 °C to +85 °C; (2)Storage Temperature:–65 °C to +125 °C; (3)Voltage on Any Pin (except VCC, VCCQ, VPP):–0.5 V to +2.45 V; (4)VPP Voltage:–0.2 V to +14 V; (5)VCC and VCCQ Voltage:–0.2 V to +2.45 V; (6)Output Short Circuit Current: 100 mA.
Features
GE28F320W18BD60 features: (1)Burst frequency at 66 MHz; (2)60 ns Initial Access Read Speed; (3)11 ns Burst-Mode Read Speed; (4)20 ns Page-Mode Read Speed; (5)4-, 8-, 16-, and Continuous-Word Burst Mode Reads; (6)Burst and Page Mode Reads in all; (7)Blocks, across all partition boundaries; (8)Burst Suspend Feature; (9)Enhanced Factory Programming at 3.1 μs/word (typ.for 0.13 μm); (10)128-bit Protection Register; (11)64-bits Unique Programmed by Intel; (12)64-bits User-Programmable; (13)Absolute Write Protection with VPP at Ground; (14)Individual and Instantaneous Block; (15)Locking/Unlocking with Lock-Down Capability; (16)Quality and Reliability; (17)5 μs (typ.) Program and Erase Suspend Latency Time; (18)Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible; (19)Programmable WAIT Signal Polarity; (20)Multiple 4-Mbit Partitions; (21)Dual Operation: RWW or RWE; (22)8KB parameter blocks; (23)64KB main blocks; (24)Top or Bottom Parameter Devices; (25)16-bit wide data bus.
Diagrams
