(Hong Kong)
Product Summary
The IRF7317 is a HEXFET Power MOSFET. The IRF7317 utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF7317 absolute maximum ratings: (1)Drain-Source Voltage: -20 V; (2)Gate-Source Voltage: ± 12 V; (3)Continuous Drain Current TA = 25°C: -5.3 A; (4)Continuous Drain Current TA = 70°C: -4.3 A; (5)Pulsed Drain Current: -21 A; (6)Continuous Source Current (Diode Conduction): -2.5 A; (7)Maximum Power Dissipation TA = 25°C: 2.0 W; (8)Maximum Power Dissipation TA = 70°C: 1.3 W; (9)Single Pulse Avalanche Energy: 150 mJ; (10)Avalanche Current: -2.9 A; (11)Repetitive Avalanche Energy: 0.20 mJ; (12)Peak Diode Recovery dv/dt: -5.0 V/ ns; (13)Junction and Storage Temperature Range: -55 to + 150 °C.
Features
IRF7317 features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)Dual N-Channel MOSFET; (4)Surface Mount; (5)Fully Avalanche Rated.
Diagrams
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Pricing (USD) |
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 IRF7317 |
Other |
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Data Sheet |
Negotiable |
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IRF7317PBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF7317TRPBF |
International Rectifier |
MOSFET MOSFT DUAL N/PCh 20V 6.6A |
Data Sheet |
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IRF7317TR |
International Rectifier |
MOSFET N+P 20V 5.3A 8-SOIC |
Data Sheet |
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