Product Summary

The IRF7422TR is a FETKYTM mosfet and schottky diode. The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Parametrics

IRF7422TR absolute maximum ratings: (1)Continuous Drain Current, VGS @ -4.5V: ID @ TA = 25°C: -4.3 A; (2)Continuous Drain Current, VGS @ -4.5V: ID @ TA = 70°C: -3.4 A; (3)Pulsed Drain Current: -33 A; (4)Power Dissipation: PD @TA = 25°C: 2.0 W; (5)Power Dissipation: PD @TA = 70°C: 1.3 W; (6)Linear Derating Factor: 16 mW/°C; (7)Gate-to-Source Voltage: ± 12 V; (8)Peak Diode Recovery dv/dt: -5.0 V/ns; (9)Junction and Storage Temperature Range: -55 to +150 °C.

Features

IRF7422TR features: (1)Co-packaged HEXFET Power MOSFET and Schottky Diode; (2)Ideal For Buck Regulator Applications; (3)P-Channel HEXFET; (4)Low VF Schottky Rectifier; (5)Generation 5 Technology; (6)SO-8 Footprint.

Diagrams

IRF7422TR pin connection