(Hong Kong)
Product Summary
The M29W400DB-45ZE6 is a 4 Mbit (512Kb x8 or 256Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W400DB-45ZE6 is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.
Parametrics
M29W400DB-45ZE6 absolute maximum ratings: (1)TBIAS Temperature Under Bias: -50 to 125 °C; (2)TSTG Storage Temperature: -65 to 150 °C; (3)VIO Input or Output Voltage: -0.6 to VCC +0.6 V; (4)VCC Supply Voltage: -0.6 to 4 V; (5)VID Identification Voltage: -0.6 to 13.5 V.
Features
M29W400DB-45ZE6 features: (1)supply voltage: VCC = 2.7V to 3.6V for Program, Erase and Read; (2)access time: 45, 55, 70ns; (3)programming time: 10μs per Byte/Word typical; (4)11 memory blocks; (5)program/erase controller: Embedded Byte/Word Program algorithms; (6)ERASE SUSPEND and RESUME MODES: Read and Program another Block during Erase Suspend; (7)unlock bypass program command: Faster Production/Batch Programming; (8)temporary block unprotection mode; (9)low power consumption: Standby and Automatic Standby; (10)100,000 program/erase cycles per block; (11)electronic signature.
Diagrams
