Product Summary

The MOCD207R1M is a dual channel phototransistor consists of two silicon phototransistors optically coupled to two GaAs infrared LEDs. The MOCD207R1M is constructed in a small outline surface mount package which conforms to the standard SOIC-8 footprint. The applicatuons of MOCD207R1M are: (1)Feedback control circuits; (2)Interfacing and coupling systems of different potentials and impedances; (3)General purpose switching circuits; (4)Monitor and detection circuits.

Parametrics

MOCD207R1M absolute maximum ratings: (1)Forward Current - Continuous: 60mA; (2)Forward Current - Peak (PW = 100 μs, 120 pps) IF (pk): 1.0 A; (3)Reverse Voltage VR: 6.0 V; (4)LED Power Dissipation @ TA = 25℃, PD: 90 mW; Derate above 25℃: 0.8 mW/℃.

Features

MOCD207R1M features: (1)Dual Channel Optocoupler; (2)Convenient Plastic SOIC-8 Surface Mountable Package Style; (3)Two channels in one compact surface mount package; (4)Closely Matched Current Transfer Ratios to Minimize Unit-to-Unit Variation; (5)Minimum V(BR)CEO of 70 Volts Guaranteed; (6)Standard SOIC-8 Footprint, with 0.050Lead Spacing; (7)Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering; (8)High Input-Output Isolation of 2500 Vac (rms) Guaranteed; (9)Meets U.L. Regulatory Requirements, File #E90700, Volume 2.

Diagrams

MOCD207R1M pin connection 

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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MOCD207R1M
MOCD207R1M

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Data Sheet

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