Product Summary

The UPD45128163GA10-9JF is a high-speed 134,217,728-bit synchronous dynamic random-access memory.

Parametrics

UPD45128163GA10-9JF absolute maximum ratings: (1)Voltage on power supply pin relative to GND: -0.5 to +4.6 V; (2)Voltage on any pin relative to GND: -0.5 to +4.6 V; (3)Short circuit output current: 50 mA; (4)Power dissipation: 1 W; (5)Operating ambient temperature: 0 to 70 °C; (6)Storage temperature: -55 to + 125 °C.

Features

UPD45128163GA10-9JF features: (1)Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge; (2)Pulsed interface; (3)Possible to assert random column address in every cycle; (4)Quad internal banks controlled by BA0(A13) and BA1(A12); (5)Byte control by LDQM and UDQM; (6)Programmable Wrap sequence (Sequential / Interleave); (7)Programmable burst length (1, 2, 4, 8 and full page); (8)Programmable /CAS latency (2 and 3); (9)Automatic precharge and controlled precharge; (10)CBR (Auto) refresh and self refresh; (11)x16 organization; (12)Single 3.3 V +/-0.3 V power supply; (13)LVTTL compatible inputs and outputs; (14)4,096 refresh cycles / 64 ms; (15)Burst termination by Burst stop command and Precharge command.

Diagrams

UPD45128163GA10-9JF dimension figure