Product Summary

The BLF145 is a Silicon N-channel enhancement mode vertical D-MOS transistor. It is designed for SSB transmitter applications in the HF frequency range. The BLF145 is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.

Parametrics

BLF145 absolute maximum ratings: (1)drain-source voltage:65V; (2)gate-source voltage:±20V; (3)drain current (DC):6A; (4)total power dissipation Tmb≤25℃:68W; (5)storage temperature:-65℃ to 150℃; (6)junction temperature:200℃.

Features

BLF145 features: (1)High power gain; (2)Low noise figure; (3)Good thermal stability; (4)Withstands full load mismatch.

Diagrams

BLF145 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF145,112
BLF145,112
NXP Semiconductors
Transistors RF MOSFET Power RF DMOS 30W HF
Data Sheet
0-24: $29.89
24-25: $27.64
25-100: $25.90
100-250: $24.19
BLF145
BLF145
Other

Data Sheet
Negotiable