(Hong Kong)
Product Summary
The BLF1820-90 is an UHF power LDMOS transistor. The applications of the BLF1820E-90 include RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range.
Parametrics
BLF1820-90 absolute maximum ratings: (1)VDS drain-source voltage: 65 V; (2)VGS gate-source voltage: ±15V; (3)ID DC drain current: 12A; (4)Tstg storage temperature: -65℃ +150℃; (5)Tj junction temperature: 200℃
Features
BLF1820-90 features: (1)Typical 2-tone performance at a supply voltage of 26V and IDQ of 500mA: Output power = 90W (PEP), Gain = 12dB, Efficiency = 32%, dim = -26dBc; (2)Easy power control; (3)Excellent ruggedness; (4)High power gain; (5)Excellent thermal stability; (6)Designed for broadband operation (1800 to 2000 MHz); (7)Internally matched for ease of use.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BLF1820-90 |
NXP Semiconductors |
Transistors RF MOSFET Power BULK TNS-RFPR |
Data Sheet |
Negotiable |
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 |
BLF1820-90,112 |
NXP Semiconductors |
Transistors RF MOSFET Power BULK TNS-RFPR |
Data Sheet |
Negotiable |
|
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