Product Summary

The fll357 is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package.

Parametrics

fll357 absolute maximum ratings: (1)Drain-Source Voltage VDS: 15V; (2)Gate-Source Voltage VGS: -5V; (3)Total Power Dissipation Ptot: 15W; (4)Storage Temperature Tstg: -65 to +175℃; (5)Channel Temperature Tch: 175℃.

Features

fll357 features: (1)High Output Power: P1dB=35.5dBm (Typ.); (2)High Gain: G1dB=11.5dB (Typ.); (3)High PAE: ndd=46% (Typ.); (4)Proven Reliability; (5)Hermetically Sealed Package.

Diagrams

fll357 block diagram