(Hong Kong)
Product Summary
The BLF6G22LS-130 is a 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this blf645 makes it ideal for digital applications. The applications of the BLF6G22LS-130 include Communication transmitter applications in the HF to 1400 MHz frequency range, Industrial applications in the HF to 1400 MHz frequency range.
Parametrics
BLF6G22LS-130 absolute maximum ratings: (1)drain-source voltage: 65 V; (2)gate-source voltage: -0.5 to +11 V; (3)drain current: 32 A; (4)storage temperature: -65 to +150 ℃; (5)junction temperature: 200 ℃.
Features
BLF6G22LS-130 features: (1)CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Average output power = 100 W, Power gain = 18 dB, Drain efficiency = 56 %; (2)2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Peak envelope load power = 100 W, Power gain = 18 dB, Drain efficiency = 45 %, Intermodulation distortion = -32 dBc.
Diagrams
| Image | Part No | Mfg | Description |  |
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 BLF6G22LS-130 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
Negotiable |
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BLF6G22LS-130 /T3 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
Negotiable |
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BLF6G22LS-130,118 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
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BLF6G22LS-130,112 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
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BLF6G22LS-130/T3 |
NXP Semiconductors |
TRANSISTOR BASE STATION SOT502B |
Data Sheet |
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