(Hong Kong)
Product Summary
The FLL200-3 is a power gaas FET that is specifically designed to provide high power at l-band frequencies with gain, linearity and efficiency superior to that of silicon device. The performance in multitone environments for class AB operation make them ideally suited for base station applications.
Parametrics
FLL200-3 absolute maximum ratings: (1)Drain-source voltage: 15 V; (2)Gate-source voltage: -5 V; (3)Total power dissipation: 83.3 W; (4)Storage temperature: -65 to +175 °C; (5)Channel temperature: 175 °C.
Features
FLL200-3 features: (1)High output power: P1dB = 42.5dBm (Typ.); (2)High gain: G1dB = 13.0dB (Typ.)@1.8GHz; (3)High PAE: ηadd = 34% (Typ.); (4)Proven reliability; (5)Hermetically sealed package.
Diagrams
