(Hong Kong)
Product Summary
The FLL300IL-3 is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon device. The performance in multitone environments for Class AB operation make the FLL300IL-3 ideally suited for base station applications.
Parametrics
FLL300IL-3 absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 100 W; (4)Storage Temperature: -65 to +175 ℃; (5)Channel Temperature: 175 ℃.
Features
FLL300IL-3 features: (1)High Output Power: P1dB = 44.5dBm (Typ.); (2)High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2); (3)High PAE: ηadd = 44% (Typ.); (4)Proven Reliability; (5)Hermetically Sealed Package.
Diagrams
