Product Summary

The FLL120 is a 120 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. The FLL120 is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. The FLL120 is uniquely suited for use in Wireless Local Loop (WLL) base station amplifiers as it offers high gain, long term reliability and ease of use. Applications are: (1)Solid State Base-Station Power Amplifier.; (2)WLL Communication Systems.

Parametrics

FLL120 absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 187.5 W; (4)Storage Temperature: -65 to +175 °C; (5)Channel Temperature: 175 °C.

Features

FLL120 features: (1)Push-Pull Configuration; (2)High Power Output: 120W (Typ.); (3)High PAE: 44%; (4)Broad Frequency Range: 2400 to 2500 MHz; (5)Suitable for class AB operation.

Diagrams

FLL120 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FLL1200IU-2
FLL1200IU-2
Other

Data Sheet
Negotiable 
FLL1200IU-3
FLL1200IU-3
Other

Data Sheet
Negotiable