(Hong Kong)
Product Summary
The FLL57 is a power gaas FET that is specifically designed to provide high power at l-band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for class AB operation make the FLL57 ideally suited for base station applications.
Parametrics
FLL57 absolute maximum ratings: (1)Drain-source voltage: 15 V; (2)Gate-source voltage: -5 V; (3)Total power dissipation: 21.4 W at TC=25 ℃; (4)Storage temperature: -65 to +175 ℃; (5)Channel temperature: 175 ℃.
Features
FLL57 features: (1)High output power: P1dB = 36.0dBm(Typ.); (2)High gain: G1dB = 11.5dB(Typ.); (3)High PAE: ηdd = 37%(Typ.); (4)Proven reliability; (5)Hermetic metal/ceramic package.
Diagrams
