(Hong Kong)
Product Summary
The IRFB13N50K is a Power MOSFET. Applications are (1)Switch Mode Power Supply (SMPS); (2)Uninterruptible Power Supplies; (3)High Speed Power Switching.
Parametrics
IRFB13N50K absolute maximum ratings: (1)Drain-Source Voltage VDS: 500 V; (2)Gate-Source Voltage VGS: ± 30V; (3)Continuous Drain Current VGS at 10 V TC = 25 °C ID: 14A, TC = 100 °C: 9.1 A; (4)Pulsed Drain Currenta IDM: 56A; (5)Single Pulse Avalanche Energyb EAS: 560 mJ; (6)Avalanche Currenta IAR: 14 A; (7)Repetitive Avalanche Energya EAR: 25 mJ; (8)Maximum Power Dissipation TC = 25 °C PD: 250 W; (9)Peak Diode Recovery dV/dtc dV/dt: 9.2 V/ns; (10)Operating Junction and Storage Temperature Range TJ, Tstg: -55 to + 150°C.
Features
IRFB13N50K features: (1)Lower Gate Charge Qg Results in Simpler Drive Reqirements; (2)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (3)Fully Characterized Capacitance and Avalanche Voltage; (4)Lead (Pb)-free Available.
Diagrams
