Product Summary

The IRFB9N65 is a Power MOSFET. The applications of it are Switch Mode Power Supply (SMPS), Uninterruptible Power Supply, High Speed Power Switching.

Parametrics

IRFB9N65 absolute maximum ratings: (1) Continuous Drain Current, VGS@10V, ID@Tc=25°C: 8.5A; (2) ontinuous Drain Current, VGS@10V, ID@Tc=100°C: 5.4A; (3) Pulsed Drain Current IDM: 21A; (4) Power Dissipation PD@Tc=25°C: 167W; (5) Linear Derating Factor: 1.3W/°C; 96) Gate-to-Source Voltage VGS: ±30V; (6)Peak Diode Recovery dv/dt: 2.8V/ns; (7) Operating Junction and Storage Temperature Range: -55 to +150°C.

Features

IRFB9N65 features: (1)Low Gate Charge Qg results in Simple Drive Requirement; (2)Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; (3)Fully Characterized Capacitance and Avalanche Voltage and Current.

Diagrams

IRFB9N65 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFB9N65A
IRFB9N65A
Vishay/Siliconix
MOSFET N-Chan 650V 8.5 Amp
Data Sheet
0-725: $2.02
725-1000: $1.94
1000-2000: $1.89
IRFB9N65A, SiHFB9N65A
IRFB9N65A, SiHFB9N65A
Other

Data Sheet
Negotiable 
IRFB9N65APBF
IRFB9N65APBF
Vishay/Siliconix
MOSFET N-Chan 650V 8.5 Amp
Data Sheet
0-1: $1.72
1-10: $1.38
10-100: $1.25
100-250: $1.06