Product Summary
The MHL21336 is a RF linear LDMOS amplifier. It is designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design of the MHL21336 provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems.
Parametrics
MHL21336 absolute maximum ratings: (1)DC Supply Voltage VDD: 30 Vdc; (2)RF Input Power Pin: +5 dBm; (3)Storage Temperature Range Tstg: - 40 to +100 ℃; (4)Operating Case Temperature Range TC: - 20 to +100 ℃.
Features
MHL21336 features: (1)Excellent Phase Linearity and Group Delay Characteristics; (2)Ideal for Feedforward Base Station Applications; (3)N Suffix Indicates Lead-Free Terminations.
Diagrams

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![]() MHL21336 |
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![]() MHL2ACLTE1N5S |
![]() KOA Speer |
![]() Power Inductors 1.5nH +/-0.3nH |
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![]() MHL2ACLTE2N7S |
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![]() Power Inductors 2.7nH +/-0.3nH |
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![]() Negotiable |
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![]() MHL2ACLTE3N3S |
![]() KOA Speer |
![]() Power Inductors 3.3nH +/-0.3nH |
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![]() MHL2ACLTE56NJ |
![]() KOA Speer |
![]() Power Inductors 56nH 5% |
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![]() MHL2ACLTER15J |
![]() KOA Speer |
![]() Power Inductors 150nH 5% |
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(Hong Kong)










