(Hong Kong)
Product Summary
MRF18030BL is a RF Power Field Effect Transistor.
Parametrics
MRF18030BL absolute maximum rarings: (1)Drain-Source Voltage VDSS: - 0.5, +65Vdc; (2)Gate-Source Voltage VGS: - 0.5, +15Vdc; (3)Total Device Dissipation @ TC = 25°C Derate above 25°C PD: 83.30.48WW/°C
Features
MRF18030BL features: (1)Internally Matched for Ease of Use; (2)High Gain, High Efficiency and High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness? Excellent Thermal Stability; (5)Low Gold Plating Thickness on Leads, 40μ″ Nominal.; (6)RoHS Compliant; (7)In Tape and Reel. R3 Suffix = 250 Units per 32 mm,13 inch Reel.
Diagrams
