(Hong Kong)
Product Summary
The mrf19085l is a RF Power Field-Effect Transistor. Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
Parametrics
mrf19085l absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage VGS: ±15 Vdc; (4)Total Device Dissipation @ TC = 25°C (1)PD: 273 W; (5)Storage Temperature Range Tstg: -65 to +150 °C; (6)Operating Junction Temperature TJ: 200 °C.
Features
mrf19085l features: (1)Internally Matched, Controlled Q, for Ease of Use; (2)High Gain, High Efficiency and High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts CW Output Power; (6)Excellent Thermal Stability; (7)Characterized with Series Equivalent Large-Signal Impedance Parameters; (8)Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal; (9)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF19085LR3 |
|
IC MOSFET RF N-CHAN NI-780 |
Data Sheet |
|
|
||||||
|
MRF19085LR5 |
|
IC MOSFET RF N-CHAN NI-780 |
Data Sheet |
|
|
||||||
|
MRF19085LSR3 |
|
IC MOSFET RF N-CHAN NI-780S |
Data Sheet |
|
|
||||||
