(Hong Kong)
Product Summary
The fll1200iu-2 is a 120 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. The fll1200iu-2 is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. The fll1200iu-2 is uniquely suited for use in Wireless Local Loop (WLL) base station amplifiers as it offers high gain, long term reliability and ease of use.
Parametrics
fll1200iu-2 absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 187.5 W; (4)Storage Temperature: -65 to +175 °C; (5)Channel Temperature: 175 °C.
Features
fll1200iu-2 features: (1)Push-Pull Configuration; (2)High Power Output: 120W (Typ.); (3)High PAE: 44%; (4)Broad Frequency Range: 2400 to 2500 MHz; (5)Suitable for class AB operation.
Diagrams
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 FLL1200IU-2 |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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FLL1200IU-2 |
Other |
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Data Sheet |
Negotiable |
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FLL1200IU-3 |
Other |
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Data Sheet |
Negotiable |
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FLL1500IU-2C |
Other |
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Data Sheet |
Negotiable |
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