Product Summary

The MRF19085 is a RF Power Field-Effect Transistor. Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Parametrics

MRF19085 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage VGS: ±15 Vdc; (4)Total Device Dissipation @ TC = 25°C (1)PD: 273 W; (5)Storage Temperature Range Tstg: -65 to +150 °C; (6)Operating Junction Temperature TJ: 200 °C.

Features

MRF19085 features: (1)Internally Matched, Controlled Q, for Ease of Use; (2)High Gain, High Efficiency and High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts CW Output Power; (6)Excellent Thermal Stability; (7)Characterized with Series Equivalent Large-Signal Impedance Parameters; (8)Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal; (9)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.

Diagrams

MRF19085 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF19085
MRF19085

Other


Data Sheet

Negotiable 
MRF19085LR3
MRF19085LR3


IC MOSFET RF N-CHAN NI-780

Data Sheet

0-250: $79.54
MRF19085LR5
MRF19085LR5


IC MOSFET RF N-CHAN NI-780

Data Sheet

0-50: $79.54
MRF19085LSR3
MRF19085LSR3


IC MOSFET RF N-CHAN NI-780S

Data Sheet

0-250: $79.54
MRF19085R3
MRF19085R3

Other


Data Sheet

Negotiable 
MRF19085SR3
MRF19085SR3

Other


Data Sheet

Negotiable