(Hong Kong)
Product Summary
The mrf19125 is an N–Channel Enhancement–Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
Parametrics
mrf19125 absolute maximum ratings: (1)Drain–Source Voltage VDSS: 65 Vdc; (2)Gate–Source Voltage VGS: –0.5, +15 Vdc; (3)Total Device Dissipation, PD 389W @ TC = 25°C; 2.22W/°C; (4)Derate above 25°C; (5)Storage Temperature Range, Tstg: –65 to +150 °C; (6)Operating Junction Temperature, TJ: 200 °C.
Features
mrf19125 features: (1)Internally Matched, Controlled Q, for Ease of Use; (2)High Gain, High Efficiency, High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Capable of Handling 10:1 VSWR, @ 26 Vdc, 1990 MHz, 120 Watts (CW) Output Power; (6)S–Parameter Characterization at High Bias Levels; (7)Excellent Thermal Stability; (8)Characterized with Series Equivalent Large–Signal Impedance Parameters.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF19125 |
Other |
|
Data Sheet |
Negotiable |
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MRF19125LR3 |
Other |
|
Data Sheet |
Negotiable |
|
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|
MRF19125R3 |
|
IC MOSFET RF N-CHAN NI-880 |
Data Sheet |
Negotiable |
|
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|
MRF19125R5 |
|
IC MOSFET RF N-CHAN NI-880 |
Data Sheet |
Negotiable |
|
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|
MRF19125S |
Other |
|
Data Sheet |
Negotiable |
|
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|
MRF19125SR3 |
Other |
|
Data Sheet |
Negotiable |
|
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