(Hong Kong)
Product Summary
The MRF20030R is an N-Channel Enhancement-Mode Lateral MOSFET designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
Parametrics
MRF20030R absolute maximum ratings: (1)Drain-Source Voltage VDSS: 65 Vdc; (2)Gate-Source Voltage VGS: -0.5, +15 Vdc; (3)Total Device Dissipation @ TC = 25°C, PD: 43.75W; 0.25W/°C Derate above 25°C; (4)Storage Temperature Range Tstg: -65 to +150 °C; (5)Operating Junction Temperature TJ: 200 °C.
Features
MRF20030R features: (1)High Gain, High Efficiency and High Linearity; (2)Integrated ESD Protection; (3)Designed for Maximum Gain and Insertion Phase Flatness; (4)Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz, 10 Watts CW Output Power; (5)Excellent Thermal Stability; (6)Characterized with Series Equivalent Large-Signal Impedance Parameters; (7)In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel; (8)Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF20030R |
Other |
|
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
MRF20030 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MRF20030R |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MRF20060 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MRF20060_1248487 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MRF20060R |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MRF20060RS |
Other |
|
Data Sheet |
Negotiable |
|
||||
