Product Summary

The MRF284 is a RF power field effect transistor. It is designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. The MRF284 is suit for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN–PCS/cellular radio and wireless local loop.

Parametrics

MRF284 absolute maximum ratings: (1)Drain–Source Voltage VDSS: 65 Vdc; (2)Gate–Source Voltage VGS: ±20 Vdc; (3)Total Device Dissipation PD @ TC = 25℃: 87.5 Watts; Derate above 25℃: 0.5 W/℃; (4)Storage Temperature Range Tstg: –65 to +150 ℃; (5)Operating Junction Temperature TJ: 200 ℃.

Features

MRF284 features: (1)Specified Two-tone Performance @ 2000 MHz, 26 Volts; (2)Typical Single-tone Performance at 2000 MHz, 26 Volts; (3)Characterized with Series Equivalent Large-signal Impedance Parameters; (4)S-parameter Characterization at High Bias Levels; (5)Excellent Thermal Stability; (6)Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts (CW)Output Power.

Diagrams

MRF284 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF284
MRF284

Other


Data Sheet

Negotiable 
MRF284LR1
MRF284LR1

Other


Data Sheet

Negotiable 
MRF284LSR1
MRF284LSR1

Other


Data Sheet

Negotiable 
MRF284S
MRF284S

Other


Data Sheet

Negotiable