Product Summary

The MRF5P21180H is a RF Power Field Effect Transistor. Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

Parametrics

MRF5P21180H absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5 to +65 Vdc; (2)Gate-Source Voltage, VGS: -0.5 to +15 Vdc; (3)Total Device Dissipation @ TC = 25℃, PD: 530W, Derate above 25℃, PD: 3.0℃/W; (4)Storage Temperature Range, Tstg: -65 to +150℃; (5)Case Operating Temperature, TC: 150℃; (6)Operating Junction Temperature, TJ: 200℃.

Features

MRF5P21180H features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Lower Thermal Resistance Package; (6)Low Gold Plating Thickness on Leads, 40μ" Nominal.; (7)RoHS Compliant; (8)In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Diagrams

MRF5P21180H block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF5P21180HR5
MRF5P21180HR5

Freescale Semiconductor

Transistors RF MOSFET Power HV5 38W WCDMA NI1230H

Data Sheet

Negotiable 
MRF5P21180HR6
MRF5P21180HR6

Freescale Semiconductor

Transistors RF MOSFET Power HV5 38W WCDMA NI1230H

Data Sheet

Negotiable