Product Summary

The MRF5S21090L is a microwave power transistor. The MRF5S21090L is designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used i n Class AB for PCN - PCS/cel lular radi o and WLL applications.

Parametrics

MRF5S21090L absolute maximum ratings: (1)Drain-Source Voltage VDSS: 65 Vdc; (2)Gate-Source Voltage VGS: -0.5, +15 Vdc; (3)Total Device Dissipation @ TC = 25°C PD: 224Watts; (4)Storage Temperature Range Tstg: - 65 to +150 °C; (5)Operating Junction Temperature TJ: 200 °C.

Features

MRF5S21090L features: (1)Internally Matched, Controlled Q, for Ease of Use; (2)High Gain, High Efficiency and High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power; (6)Excellent Thermal Stability; (7)Characterized with Series Equivalent Large-Signal Impedance Parameters; (8)Qualified Up to a Maximum of 32 VDD Operation; (9)Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal; (10)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Diagrams

MRF5S21090L block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF5S21090LR3
MRF5S21090LR3
Other

Data Sheet
Negotiable 
MRF5S21090LSR3
MRF5S21090LSR3
Other

Data Sheet
Negotiable