(Hong Kong)
Product Summary
The BLW96 is an NPN silicon RF power transistor. The BLW96 is designed for high linearity class A, AB HF power amplifier applications up to 30 MHz.
Parametrics
BLW96 absolute maximum ratings: (1)IC: 12 A; (2)VEES: 110 V; (3)VCEO: 55 V; (4)VEBO: 4.0 V; (5)PDISS: 320 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 0.7 ℃/W.
Features
BLW96 features: (1)PG = 14 dB Typical at 200 W/28 MHz; (2)IMD3 = -32 dBc Typ. at 220 W(PEP); (3)Omnigold metalization system.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
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 BLW96 |
Advanced Semiconductor, Inc. |
Transistors RF MOSFET Power RF Transistor |
Data Sheet |
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BLW96/01,112 |
NXP Semiconductors |
Transistors RF Bipolar Power Dual N-CH 340W 10mA |
Data Sheet |
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