(Hong Kong)
Product Summary
The MRF5S9150H is a RF power field effect transistor. The MRF5S9150H designed for n-cdma base station applications with frequencies from 869 to 960 mhz. suitable for multicarrier amplifier applications.
Parametrics
MRF5S9150H absolute maximum ratings: (1)drain-source voltage vdss: -0.5 to 68 vdc; (2)gate-source voltage vgs: -0.5 to 15 vdc; (3)storage temperature range tstg: -65 to +150 °c; (4)case operating temperature tc: 150 °c; (5)operating junction temperature tj: 200 °c.
Features
MRF5S9150H features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Lower Thermal Resistance Package; (6)Low Gold Plating Thickness on Leads, 40μ″ Nominal.; (7)RoHS Compliant; (8)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel..
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF5S9150HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV5 900MHZ 150W NI780H |
Data Sheet |
Negotiable |
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|
MRF5S9150HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV5 900MHZ 150W NI780H |
Data Sheet |
Negotiable |
|
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|
MRF5S9150HSR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV5 900MHZ 150W NI780HS |
Data Sheet |
Negotiable |
|
||||
|
MRF5S9150HSR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV5 900MHZ 150W NI780HS |
Data Sheet |
Negotiable |
|
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