Product Summary

The MRF6P21190H is a RF power field effect transistor. It is designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.

Parametrics

MRF6P21190H absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +68 Vdc; (2)Gate-Source Voltage VGS: -0.5, +12 Vdc; (3)Total Device Dissipation @ TC = 25℃ PD: 700W; Derate above 25℃ PD: 4W/℃ (4)Storage Temperature Range Tstg: -65 to +150 ℃; (5)Operating Junction Temperature TJ: 200℃; (6)CW Operation CW: 190W.

Features

MRF6P21190H features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Lower Thermal Resistance Package; (6)Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications; (7)Low Gold Plating Thickness on Leads, 40μ Nominal.; (8)Pb-Free and RoHS Compliant; (9)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Diagrams

MRF6P21190H pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF6P21190H
MRF6P21190H
Other

Data Sheet
Negotiable 
MRF6P21190HR5
MRF6P21190HR5
Freescale Semiconductor
Transistors RF MOSFET Power HV6 44W W/CDMA
Data Sheet
Negotiable 
MRF6P21190HR6
MRF6P21190HR6
Freescale Semiconductor
Transistors RF MOSFET Power HV6 44W W/CDMA
Data Sheet
Negotiable