Product Summary

The MRF6S9160H is an N-Channel Enhancement -Mode Lateral MOSFET. Designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications.

Parametrics

MRF6S9160H absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +68 Vdc; (2)Gate-Source Voltage VGS: -0.5, +12 Vdc; (3)Storage Temperature Range Tstg: - 65 to +150 °C; (4)Case Operating Temperature TC: 150 °C; (5)Operating Junction Temperature TJ: 225 °C.

Features

MRF6S9160H features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)RoHS Compliant; (6)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Diagrams

MRF6S9160H block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF6S9160HR3
MRF6S9160HR3

MOSFET RF N-CHAN 28V 35W NI-780
Data Sheet
0-250: $43.59
MRF6S9160HR5
MRF6S9160HR5

MOSFET RF N-CHAN 28V 35W NI-780
Data Sheet
0-50: $43.59
MRF6S9160HSR3
MRF6S9160HSR3

MOSFET RF N-CHAN 28V 35W NI-780S
Data Sheet
0-250: $43.59
MRF6S9160HSR5
MRF6S9160HSR5

MOSFET RF N-CHAN 28V 35W NI-780S
Data Sheet
0-50: $43.59