Product Summary

The MRF9060LR5 is a RF Power field effect transistor designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of the device makes the MRF9060LR5 ideal for large- signal, common-source amplifier applications in 26 volt base station equipment.

Parametrics

MRF9060LR5 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: - 0.5, +65 Vdc; (2)Gate-Source Voltage, VGS: - 0.5, +15 Vdc; (3)Total Device Dissipation @ TC = 25℃, PD: 159W(MRF9060LR1); (4)Total Device Dissipation Derate above 25℃: 0.91 W/℃(MRF9060LR1); (5)Total Device Dissipation @ TC = 25℃, PD: 219W(MRF9060LSR1); (6)Total Device Dissipation Derate above 25℃: 1.25 W/℃(MRF9060LSR1); (7)Storage Temperature Range, Tstg: - 65 to +150 ℃; (8)Case Operating Temperature, TC: 150 ℃; (9)Operating Junction Temperature, TJ: 200 ℃.

Features

MRF9060LR5 features: (1)Integrated ESD Protection; (2)Designed for Maximum Gain and Insertion Phase Flatness; (3)Excellent Thermal Stability; (4)Characterized with Series Equivalent Large-Signal Impedance Parameters; (5)Low Gold Plating Thickness on LeadsL Suffix Indicates 40u Nominal; (6)RoHS Compliant; (7)In Tape and ReelR1 Suffix = 500 Units per 32 mm, 13 inch Reel.

Diagrams

MRF9060LR5 block diagram

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