(Hong Kong)
Product Summary
The mrf9100 is an N-Channel Enhancement -Mode Lateral MOSFET. Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 26 volt base station equipment.
Parametrics
mrf9100 absolute maximum ratings: (1)Drain-Source Voltage VDSS: - 0.5. +65 Vdc; (2)Gate-Source Voltage VGS: - 0.5. +15 Vdc; (3)Total Device Dissipation PD 175W @ TC = 25°C; 1.0W/°C; (4)Derate above 25°C; (5)Storage Temperature Range Tstg: - 65 to +150 °C; (6)Case Operating Temperature TC: 150 °C; (7)Operating Junction Temperature TJ: 200 °C.
Features
mrf9100 features: (1)Integrated ESD Protection; (2)Designed for Maximum Gain and Insertion Phase Flatness; (3)Excellent Thermal Stability; (4)Characterized with Series Equivalent Large-Signal Impedance Parameters; (5)Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal; (6)RoHS Compliant; (7)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 MRF9100SR3 |
Other |
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Data Sheet |
Negotiable |
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MRF9100R3 |
Other |
|
Data Sheet |
Negotiable |
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MRF9100 |
Other |
|
Data Sheet |
Negotiable |
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