Product Summary

The MRF9130L is an N-Channel Enhancement -Mode Lateral MOSFET. Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 26 volt base station equipment.

Parametrics

MRF9130L absolute maximum ratings: (1)Drain-Source Voltage VDSS: - 0.5. +65 Vdc; (2)Gate-Source Voltage VGS: - 0.5. +15 Vdc; (3)Total Device Dissipation PD 175W @ TC = 25°C; 1.0W/°C; (4)Derate above 25°C; (5)Storage Temperature Range Tstg: - 65 to +150 °C; (6)Case Operating Temperature TC: 150 °C; (7)Operating Junction Temperature TJ: 200 °C.

Features

MRF9130L features: (1)Integrated ESD Protection; (2)Designed for Maximum Gain and Insertion Phase Flatness; (3)Excellent Thermal Stability; (4)Characterized with Series Equivalent Large-Signal Impedance Parameters; (5)Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal; (6)RoHS Compliant; (7)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Diagrams

MRF9130L block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF9130LR3
MRF9130LR3
Other

Data Sheet
Negotiable 
MRF9130LSR3
MRF9130LSR3
Other

Data Sheet
Negotiable