(Hong Kong)
Product Summary
The MRFE6S9125NBR1 is a RF power field effect transistor.The MRFE6S9125NBR1 is designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of the MRFE6S9125NBR1 make it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.
Parametrics
MRFE6S9125NBR1 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +66 Vdc; (2)Gate-Source Voltage VGS: -0.5, +12 Vdc; (3)Maximum Operation Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: - 65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature (1,2) TJ: 225 ℃.
Features
MRFE6S9125NBR1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Integrated ESD Protection; (4)225℃ Capable Plastic Package; (5)RoHS Compliant; (6)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
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 MRFE6S9125NBR1 |
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