(Hong Kong)
Product Summary
The PTB20082 is a cellular radio RF power transistor. It can be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. And it is intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications.
Parametrics
PTB20082 absolute maximum ratings: (1)Collector-Emitter Voltage VCER: 50 Vdc; (2)Collector-Base Voltage VCBO: 50 Vdc; (3)Emitter-Base Voltage (collector open) VEBO: 4.0 Vdc; (4)Collector Current (continuous) IC: 1.4 Adc; (5)Total Device Dissipation at Tflange = 25℃: 52 Watts; (6)Storage Temperature Range TSTG: -40 to +150℃; (7)Thermal Resistance (Tflange = 70℃): 3.4 ℃/W.
Features
PTB20082 features: (1)10 Watts Linear Power; (2)Output Power at 1 dB Compressed = 15 W; (3)Class AB Characteristics; (4)30% Collector Efficiency at 7.5 Watts; (5)Gold Metallization; (6)Silicon Nitride Passivated.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 PTB20082 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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PTB20001 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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PTB20006 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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|
PTB20007 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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PTB20009 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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PTB20011 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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PTB20053 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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