Product Summary

The PTF102003 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. The PTF102003 is typically operates at 48% efficiency (P-1dB) and 14 dB linear gain. Full gold metallization ensures excellent device lifetime and reliability.

Parametrics

PTF102003 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 65 Volts; (2)Gate-Source Voltage, VGS: +15, -0.5 Volts; (3)Operating Junction Temperature, TJ: 200℃; (4)Total Device Dissipation, PD: 330 Watts; Above 25℃ derate by: 1.88 W/℃; (5)Storage Temperature Range, TSTG: –40 to +150℃; (6)Thermal Resistance (TCASE = 70°C), RθJC: 0.55℃/W.

Features

PTF102003 features: (1)internally matched; (2)Typical WCDMA Performance at 28 V: Average Output Power = 20 W atts; Gain = 14 dB; Efficiency = 22%; (3)Typical CW Performance at 28 V: Output Power at P1-dB = 120 W atts; Gain = 13 dB; Efficiency = 48%; (4)Full Gold Metallization; (5)Integrated ESD Protection; Class 1 (minimum) Human Body Model; (6)Excellent Thermal Stability; (7)Broadband Internal Matching; (8)Low HCI Drift; (9)Capable of Handling 10:1 VSWR @ 28 V ,120 Watts (CW) Output Power.

Diagrams

PTF102003 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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(USD)		 Quantity
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