(Hong Kong)
Product Summary
The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The RA07H4047M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
Parametrics
RA07H3340M absolute maximum ratings: (1)On the conditions of VGG<3.5V, VDD Drain Voltage: 13.2 V; (2)On the conditions of VDD<12.5V, Pin=0mW, VGG Gate Voltage: 4 V; (3)On the conditions of f=400-470MHz, ZG=ZL=50Ω, Pin Input Power: 30 mW; (4)On the conditions of f=400-470MHz, ZG=ZL=50Ω, Pout Output Power: 10 W; (5)Tcase(OP) Operation Case Temperature Range: -30 to +90 ℃; (6)Tstg Storage Temperature Range: -40 to +110 ℃.
Features
RA07H3340M features: (1)Enhancement-Mode MOSFET Transistors(IDD≈0 @ VDD=12.5V, VGG=0V); (2)Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW; (3)ηT>40% @ Pout=7W (VGG control), VDD=12.5V, Pin=20mW; (4)Broadband Frequency Range: 400-470MHz; (5)Low-Power Control Current IGG=1mA (typ) at VGG=3.5V; (6)Module Size: 30 × 10 × 5.4 mm; (7)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.
Diagrams
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 RA07H3340M |
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RA07H0608M |
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Negotiable |
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RA07H3340M |
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Negotiable |
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RA07H4047M |
Other |
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Data Sheet |
Negotiable |
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RA07H4047M-E01 |
Other |
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Data Sheet |
Negotiable |
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RA07H4452M |
Other |
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Data Sheet |
Negotiable |
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RA07M0608M |
Other |
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Data Sheet |
Negotiable |
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